052-6209 rev c 5-2002 apt15gt60br caution: these devices are sensitive to electrostatic discharge. proper handling procedures should be followed. apt website - http://www.advancedpower.com min typ max 600 345 2.0 2.5 2.8 200 1500 100 characteristic / test conditions collector-emitter breakdown voltage (v ge = 0v, i c = 0.5ma) gate threshold voltage (v ce = v ge , i c = 700a, t j = 25c) collector-emitter on voltage (v ge = 15v, i c = i c2 , t j = 25c) collector-emitter on voltage (v ge = 15v, i c = i c2 , t j = 150c) collector cut-off current (v ce = v ces , v ge = 0v, t j = 25c) collector cut-off current (v ce = v ces , v ge = 0v, t j = 150c) gate-emitter leakage current (v ge = 20v, v ce = 0v) symbol bv ces v ge (th) v ce (on) i ces i ges maximum ratings all ratings: t c = 25c unless otherwise specified. static electrical characteristics unit volts a na symbol v ces v cgr v ge i c1 i c2 i cm i lm e as p d t j ,t stg t l parameter collector-emitter voltage collector-gate voltage (r ge = 20k ? ) gate emitter voltage continuous collector current @ t c = 25c continuous collector current @ t c = 105c pulsed collector current 1 @ t c = 25c rbsoa clamped inductive load current r g = 11 ? t c = 110c single pule avalanche energy 2 total power dissipation operating and storage junction temperature range max. lead temp. for soldering: 0.063" from case for 10 sec. apt15gt60br 600 600 20 30 15 60 30 24 125 -55 to 150 300 unit volts amps m j watts c usa 405 s.w. columbia street bend, oregon 97702 -1035 phone: (541) 382-8028 fax: (541) 388-0364 europe chemin de magret f-33700 merignac - france phone: (33) 5 57 92 15 15 fax: (33) 5 56 47 97 61 apt15gt60br 600v 30a to-247 g c e g c e the thunderbolt igbt ? is a new generation of high voltage power igbts. using non-punch through technology the thunderbolt igbt? offers superior ruggedness and ultrafast switching speed. ? low forward voltage drop ? high freq. switching to 150khz ? low tail current ? ultra low leakage current ? avalanche rated ? rbsoa and scsoa rated
052-6209 rev c 5-2002 apt15gt60br symbol c ies c oes c res q g q ge q gc t d (on) t r t d (off) t f t d (on) t r t d (off) t f e on e off e ts t d (on) t r t d (off) t f e ts gfe dynamic characteristics thermal and mechanical characteristics test conditions capacitance v ge = 0v v ce = 25v f = 1 mhz gate charge v ge = 15v v cc = 0.5v ces i c = i c2 resistive switching (25c) v ge = 15v v cc = 0.5v ces i c = i c2 r g = 10 ? inductive switching (150c) v clamp (peak) = 0.66v ces v ge = 15v i c = i c2 r g = 10 ? t j = +150c inductive switching (25c) v clamp (peak) = 0.66v ces v ge = 15v i c = i c2 r g = 10 ? t j = +25c v ce = 20v, i c = i c2 min typ max 810 930 130 190 52 90 74 110 58 34 50 920 27 50 92 140 123 250 11 21 13 30 110 170 148 300 160 320 465 930 625 1250 11 20 13 30 91 140 67 130 395 790 3 unit pf nc ns ns j ns j s characteristic input capacitance output capacitance reverse transfer capacitance total gate charge 3 gate-emitter charge gate-collector ("miller ") charge turn-on delay time rise time turn-off delay time fall time turn-on delay time rise time turn-off delay time fall time turn-on switching energy turn-off switching energy total switching losses turn-on delay time rise time turn-off delay time fall time total switching losses forward transconductance 1 repetitive rating: pulse width limited by maximum junction temperature. 2 i c = i c2 , v cc = 50v, r ge = 25 ? , l = 200h, t j = 25c 3 see mil-std-750 method 3471 apt reserves the right to change, without notice, the specifications and information contained herein. unit c/w oz gm min typ max 1.0 40 0.22 5.90 characteristic junction to case junction to ambient package weight symbol r jc r ja w t
052-6209 rev c 5-2002 apt15gt60br c, capacitance (pf) i c , collector current (amperes) i c , collector current (amperes) v ge , gate-to-emitter voltage (volts) i c , collector current (amperes) i c , collector current (amperes) t c =+25c t j =+150c single pulse i c = i c2 t j = +25c f = 1mhz c ies c res 1.0 0.5 0.1 0.05 0.01 0.005 0.001 note: duty factor d = t 1 / t 2 peak t j = p dm x z jc + t c t 1 t 2 p dm 0.05 d=0.5 0.2 0.1 0.02 0.01 single pulse c oes z jc , thermal impedance (c/w) operation limited by v ce (sat) 6v 8v 7v v ge =15, 10 & 9v 7v 6v 8v 5v v ge =15, 10 & 9v 250sec. pulse test v ge = 15v t c =-55c t c =+150c v ce =480v v ce =300v v ce =120v i c = i c2 t j = +25c 5v 0 4 8 12 16 20 0 4 8 12 16 20 0 1 2 3 4 5 1 5 10 50 100 600 0.01 0.1 1.0 10 50 0 20 40 60 80 100 120 10 -5 10 -4 10 -3 10 -2 10 -1 1.0 10 30 25 20 15 10 5 0 100 60 10 5 1 20 16 12 8 4 0 t c =+25c v ce , collector-to-emitter voltage (volts) v ce , collector-to-emitter voltage (volts) figure 1, typical output characteristics (t j = 25c) figure 2, typical output characteristics (t j = 150c) v ce , collector-to-emitter voltage (volts) v ce , collector-to-emitter voltage (volts) figure 3, typical output characteristics figure 4, maximum safe operating area v ce , collector-to-emitter voltage (volts) q g , total gate charge (nc) figure 5, typical capacitance vs collector-to-emitter voltage figure 6, gate charges vs gate-to-emitter voltage rectangular pulse duration (seconds) figure 7, maximum effective transient thermal impedance, junction-to-case vs pulse duration 30 25 20 15 10 5 0 30 25 20 15 10 5 0 3,000 1,000 500 100 50 10 100s 1ms 10ms
052-6209 rev c 5-2002 apt15gt60br t j , junction temperature (c) t c , case temperature (c) figure 8, typical v ce (sat) voltage vs junction temperature figure 9, maximum collector current vs case temperature t j , junction temperature (c) r g , gate resistance (ohms) figure 10, breakdown voltage vs junction temperature figure 11, typical switching energy losses vs gate resistance t j , junction temperature (c) i c , collector current (amperes) figure 12, typical switching energy losses vs. junction temperature figure 13, typical switching energy losses vs collector curr ent f, frequency (khz) figure 14,typical load current vs frequency i c1 e on e on e off 0.5 i c2 i c2 0.5 i c2 i c2 i c1 4.0 3.5 3.0 2.5 2.0 1.5 1.0 1.2 1.1 1 0.9 0.8 0.7 10 1 0.1 100 10 1 v cc = 0.66 v ces v ge = +15v r g = 10 ? v cc = 0.66 v ces v ge = +15v t j = +25c i c = i c2 v cc = 0.66 v ces v ge = +15v t j = +125c r g = 10 ? -50 -25 0 25 50 75 100 125 150 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150 0 20 40 60 80 100 -50 -25 0 25 50 75 100 125 150 0 3 6 9 12 15 0.1 1.0 10 100 1000 i c , collector current (amperes) total switching energy losses (mj) bv ces , collector-to-emitter breakdown v ce (sat), collector-to-emitter voltage (normalized) saturation voltage (volts) switching energy losses (mj) switching energy losses (mj) i c , collector current (amperes) 30 25 20 15 10 5 0 .8 .6 .4 .2 0 .4 .3 .2 .1 0 for both: duty cycle = 50% t j = +125c t case = +90c gate drive as specified power dissapation = 35w i load = i rms of fundamental e off
052-6209 rev c 5-2002 apt15gt60br t0-247 package outline apt's devices are covered by one or more of the following u.s.patents: 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 15.49 (.610) 16.26 (.640) 5.38 (.212) 6.20 (.244) 6.15 (.242) bsc 4.50 (.177) max. 19.81 (.780) 20.32 (.800) 20.80 (.819) 21.46 (.845) 1.65 (.065) 2.13 (.084) 1.01 (.040) 1.40 (.055) 3.50 (.138) 3.81 (.150) 2.87 (.113) 3.12 (.123) 4.69 (.185) 5.31 (.209) 1.49 (.059) 2.49 (.098) 2.21 (.087) 2.59 (.102) 0.40 (.016) 0.79 (.031) collector collector emitter gate 5.45 (.215) bsc dimensions in millimeters and (inches) 2-plcs. *driver same type as d.u.t. v cc = 0.66 v ces e ts = e on + e off v ce (on) t d (off) t d (on) t f t r 1 figure 15, switching loss test circuit and waveforms figure 16, resistive switching time test circuit and waveforms 2 v cc r g r l = .5 v ces i c2 10% 90% v ge (on) v ce (off) v ge (off) 2 1 from gate drive circuitry d.u.t. b i c i c 90% 10% 90% 10% 10% 90% e off t f t d (off) t d (on) t r e on i c v clamp 100uh v charge a a b d.u.t. driver* v c a r g v c v c d.u.t. v ce (sat) t=2us
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